Applied Materials, Inc.

Other

Dian Sugiarto

Li-Qun Xia

Peter Wai-Man Lee

Ellie Y Yieh

Chi-I Lang

Kang Sub Yim

Timothy Weidman

Melissa M Tam

Srinivas D Nemani

Mehul B Naik

Shankar Venkataraman

David Wingto Cheung

Allen Richard Zhao

Seon-Mee Cho

Chen-An Chen

Ping Xu

Jia Lee

Francimar Campana-Schmitt

Tim Weidman

Judy H Huang

David S Mui

Olivier Joubert

Tzu-Fang Huang

Cedric Monget

Yung-Cheng Lu

Visweswaren Sivaramakrishnan

Wai-Fan Yau

Farhad K Moghadam

Tsutomu Tanaka

Peter K Lee

Ju-Hyung Lee

Ralf B Willecke

Huong Thanh Nguyen

Mario David Silvetti

Nasreen Gazala Chopra

Kuo-Wei Liu

Tian-Hoe Lim

Lihua Li

Soovo Sen

Paul Matthews

Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.

Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)

A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.

CVD plasma assisted lower dielectric constant SICOH film

A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

Method of depositing dielectric films

A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled between a disk and a mounting flange. The disk has a plurality of holes formed therethrough. A lip extends from a side of the disk opposite the annular body and away from the mounting flange. The showerhead may be used for the deposition of dielectric materials on a substrate. In one embodiment, silicon nitride and silicon oxide layers are formed on the substrate without removing the substrate from a processing chamber utilizing the showerhead of the present invention.

Method and apparatus for deposition of low dielectric constant materials

A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.

Methods of reducing plasma-induced damage for advanced plasma CVD dielectrics

Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide

A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.

Damascene structure fabricated using a layer of silicon-based photoresist material

A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.

Method of depositing low dielectric constant carbon doped silicon oxide

A process for etching a PPMS layer that increases the etch selectivity of PPMS relative to PPMSO from an initial low etch selectivity to a higher etch selectivity at a later stage of the etching process. In some embodiments, the etch selectivity used during a first etching step of the process is less than 4:1 and the etch selectivity used during a second etching step, subsequent to the first step, is greater than 5:1. In some other embodiments, the etch selectivity of the first step is between 2-3:1 and the etch selectivity of the second step is greater than 8:1. Optionally, in still other embodiments a third etching step, performed between the first and second etching steps may be employed where the etch selectivity is between 3-8:1.

Process for depositing and developing a plasma polymerized organosilicon photoresist film

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Sunnyvale, CA, United States of America

Dian Sugiarto