The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2005
Filed:
Aug. 20, 2003
Lihua LI, San Jose, CA (US);
Tsutomu Tanaka, Santa Clara, CA (US);
Tzu-fang Huang, San Jose, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Dian Sugiarto, Sunnyvale, CA (US);
Visweswaren Sivaramakrishnan, Santa Clara, CA (US);
Peter Wai-man Lee, San Jose, CA (US);
Mario David Silvetti, Morgan Hill, CA (US);
Lihua Li, San Jose, CA (US);
Tsutomu Tanaka, Santa Clara, CA (US);
Tzu-Fang Huang, San Jose, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Dian Sugiarto, Sunnyvale, CA (US);
Visweswaren Sivaramakrishnan, Santa Clara, CA (US);
Peter Wai-Man Lee, San Jose, CA (US);
Mario David Silvetti, Morgan Hill, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.