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For the Inventor, By the Inventor

Austin, TX, United States of America

Di-Hong Lee

This inventor holds 9 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2005-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Di-Hong Lee. Retrieved from https://idiyas.com/inventor/di-hong-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 9

% Patents Active = 77.8

Average Co-Inventor Count = 4.8

ph-index = 6

Forward Citations = 165(Granted Patents)


Location History:

  • Hsin-Chu, TW (2005 - 2010)
  • Austin, TX (US) (2007 - 2014)

Company Filing History:

goldMedal9 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2005-2014

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9 patents (USPTO):Explore Patents
1. 8865539 - Fully depleted SOI multiple threshold voltage application (2014-10-21),
2. 7663185 - FIN-FET device structure formed employing bulk semiconductor substrate (2010-02-16),
3. 7538351 - Method for forming an SOI structure with improved carrier mobility and ESD protection (2009-05-26),
4. 7452778 - Semiconductor nano-wire devices and methods of fabrication (2008-11-18),
5. 7382023 - Fully depleted SOI multiple threshold voltage application (2008-06-03),
6. 7332777 - STI liner for SOI structure (2008-02-19),
7. 7265425 - Semiconductor device employing an extension spacer and a method of forming the same (2007-09-04),
8. 7205601 - FinFET split gate EEPROM structure and method of its fabrication (2007-04-17),
9. 6955955 - STI liner for SOI structure (2005-10-18),

Title: Innovator Spotlight: Di-Hong Lee - Revolutionizing Integrated Circuits

Introduction:

Di-Hong Lee, a brilliant inventor based in Austin, TX, has been making significant strides in the field of integrated circuits. With a total of 9 patents to his name, Lee's contributions have been instrumental in shaping the future of semiconductor technology.

Latest Patents:

1. Fully Depleted SOI Multiple Threshold Voltage Application: Lee's innovative integrated circuit design features a substrate with a buried dielectric of varying thickness. This technology allows for enhanced performance and efficiency in semiconductor devices.

2. FIN-FET Device Structure Employing Bulk Semiconductor Substrate: Lee's method of fabricating fin-FET devices using a bulk semiconductor substrate offers a cost-effective approach to semiconductor manufacturing, paving the way for advancements in the industry.

Career Highlights:

Currently employed at Taiwan Semiconductor Manufacturing Company Ltd., Lee has been at the forefront of cutting-edge research and development in the semiconductor sector. His expertise and innovative approach have garnered recognition within the industry.

Collaborations:

Lee has collaborated with talented individuals such as Hung-Wei Chen and Kuang-Hsin Chen in bringing his groundbreaking ideas to fruition. Together, they have worked towards pushing the boundaries of integrated circuit technology and driving innovation forward.

Conclusion:

Di-Hong Lee's creative vision and dedication to advancing integrated circuits have established him as a trailblazer in the field. His patented inventions reflect a commitment to excellence and a relentless pursuit of technological advancement, setting a high standard for future innovators to follow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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