The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2008
Filed:
Apr. 12, 2005
Hung-wei Chen, Hsinchu, TW;
Yee-chia Yeo, Singapore, SG;
Di-hong Lee, Austin, TX (US);
Fu-liang Yang, Hsin-Chu, TW;
Chenming HU, Alamo, CA (US);
Hung-Wei Chen, Hsinchu, TW;
Yee-Chia Yeo, Singapore, SG;
Di-Hong Lee, Austin, TX (US);
Fu-Liang Yang, Hsin-Chu, TW;
Chenming Hu, Alamo, CA (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Nano-wires, preferably of less than 20 nm diameter, can be formed with minimized risk of narrowing and breaking that results from silicon atom migration during an annealing process step. This is accomplished by masking portion of the active layer where silicon atomer would otherwise agglomerate with a material such as silicon dioxide, silicon nitride, or other dielectric that eliminates or substantially reduces the silicon atom migration. Nano-wires, nanotubes, nano-rods, and other features can be formed and can optionally be incorporated into devices, such as by use as a channel region in a transistor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile