The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Jun. 09, 2005
Di-hong Lee, Austin, TX (US);
Hsun-chih Tsao, Hsin-Chu, TW;
Kuang-hsin Chen, Jung-Li, TW;
Hung-wei Chen, Hsinchu, TW;
Di-Hong Lee, Austin, TX (US);
Hsun-Chih Tsao, Hsin-Chu, TW;
Kuang-Hsin Chen, Jung-Li, TW;
Hung-Wei Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A FinFET split gate EEPROM structure includes a semiconductor substrate and an elongated semiconductor fin extending above the substrate. A control gate straddles the fin, the fin's sides and a first drain-proximate portion of a channel between a source and drain in the fin. The control gate includes a tunnel layer and a floating electrode over which are a first insulative stratum and a first conductive stratum. A select gate straddles the fin and its sides and a second, source-promixate portion of the channel. The select gate includes a second insulative stratum and a second conductive stratum. The insulative strata are portions of a continuous insulative layer covering the substrate and the fin. The conductive strata are electrically continuous portions of a continuous conductive layer formed on the insulative layer.