Daisuke Nishide

Title: Daisuke Nishide: Innovator in Substrate Processing Technologies

Introduction

Daisuke Nishide is a prominent inventor based in Nirasaki, Japan. He has made significant contributions to the field of semiconductor manufacturing, holding a total of 7 patents. His innovative work focuses on substrate processing methods that enhance the efficiency and effectiveness of semiconductor devices.

Latest Patents

Nishide's latest patents include a substrate processing method, a method for manufacturing semiconductor devices, and a plasma processing apparatus. The substrate processing method involves providing a substrate with distinct regions and forming a deposit film through plasma generation. This method selectively etches one region of the substrate while preserving another, utilizing a mixed gas that includes carbon and fluorine atoms along with silicon atoms. Additionally, his substrate processing method outlines steps for providing a substrate with an etching target film and masks, forming a protective film, and etching the target film using plasma from a second gas.

Career Highlights

Daisuke Nishide has established himself as a key figure in the semiconductor industry through his innovative approaches to substrate processing. His work at Tokyo Electron Limited has positioned him at the forefront of technological advancements in semiconductor manufacturing.

Collaborations

Nishide collaborates with notable colleagues such as Munehito Kagaya and Takashi Matsumoto, contributing to a dynamic team focused on pushing the boundaries of semiconductor technology.

Conclusion

Daisuke Nishide's contributions to substrate processing methods and semiconductor device manufacturing highlight his role as a leading inventor in the field. His innovative patents and collaborative efforts continue to shape the future of semiconductor technology.