The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Dec. 24, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Daisuke Nishide, Miyagi, JP;
Takayuki Katsunuma, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32715 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract
A substrate processing method includes a providing step, a forming step, and an etching step. In the providing step, a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed to cover at least a part of the first mask is provided. In the forming step, a protective film is formed on a side wall of the second mask by plasma generated from a first gas. In the etching step, the etching target film is etched with plasma generated from a second gas.