The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Aug. 05, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Daisuke Nishide, Nirasaki, JP;

Takashi Matsumoto, Nirasaki, JP;

Munehito Kagaya, Nirasaki, JP;

Ryota Ifuku, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/18 (2006.01); C23C 16/26 (2006.01); C23C 16/46 (2006.01); C23C 16/455 (2006.01); H01L 21/687 (2006.01); C23C 16/02 (2006.01); C23C 16/56 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); C01B 31/04 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/26 (2013.01); C01B 31/0453 (2013.01); C23C 16/0218 (2013.01); C23C 16/0281 (2013.01); C23C 16/18 (2013.01); C23C 16/45523 (2013.01); C23C 16/46 (2013.01); C23C 16/56 (2013.01); H01L 21/28556 (2013.01); H01L 21/68742 (2013.01); H01L 21/76864 (2013.01); H01L 21/76876 (2013.01); H01L 23/53276 (2013.01); H01L 21/67103 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.


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