The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Jan. 29, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/18 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/185 (2013.01); C23C 16/505 (2013.01); H01J 37/32082 (2013.01); H01J 37/32899 (2013.01); H01L 21/306 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 21/31127 (2013.01); H01L 21/32135 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3321 (2013.01);
Abstract
An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.