The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Nov. 20, 2015
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C01B 31/04 (2006.01); C23C 16/26 (2006.01); C23C 16/02 (2006.01); C23C 16/452 (2006.01); C23C 16/455 (2006.01); C01B 32/186 (2017.01);
U.S. Cl.
CPC ...
C01B 31/0453 (2013.01); C01B 32/186 (2017.08); C23C 16/0281 (2013.01); C23C 16/26 (2013.01); C23C 16/452 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C01B 2204/32 (2013.01);
Abstract
A graphene producing method which is capable of increasing a size of each domain of graphene. A plasma CVD film formation device that activates a catalyst metal layer formed on a wafer; modifies the same into an activated catalyst metal layer; decomposes a CHgas as a low reactivity carbon-containing gas by plasma in a space that opposes the wafer; and decomposes a CHgas as a high reactivity carbon-containing gas by heat in the space.