The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Sep. 29, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Takayuki Katsunuma, Miyagi, JP;
Daisuke Nishide, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/311 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32174 (2013.01); H01J 37/3244 (2013.01); H01L 21/31116 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract
A substrate processing method includes: providing a substrate including a first region and a second region into a chamber; forming a deposit film on the first region and the second region of the substrate by generating a first plasma from a first processing gas, and selectively etching the first region with respect to the second region by generating a second plasma from the second processing gas containing an inert gas. The first processing gas is a mixed gas including a first gas containing carbon atoms and fluorine atoms and a second gas containing silicon atoms.