Nagoya, Japan

Daisuke Nakamura


Average Co-Inventor Count = 2.3

ph-index = 5

Forward Citations = 56(Granted Patents)


Location History:

  • Aichi-gun, JP (2004)
  • Nagoya, JP (1997 - 2016)
  • Nagakute, JP (2020 - 2023)

Company Filing History:


Years Active: 1997-2023

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11 patents (USPTO):Explore Patents

Title: Daisuke Nakamura: Innovator in Semiconductor Technology

Introduction

Daisuke Nakamura is a prominent inventor based in Nagoya, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His innovative work has paved the way for advancements in various applications.

Latest Patents

One of his latest patents is focused on a semiconductor device and method for manufacturing the same. This semiconductor device includes a substrate and an n-type layer made of a nitride semiconductor formed on the substrate's surface. The n-type layer is characterized by specific concentrations of donor impurities, C impurities, O impurities, and Ca impurities, ensuring optimal performance. Another notable patent involves a heat-resistant member composed of an isotropic graphite base member, featuring a dense WC layer with low porosity. This design enhances the durability and efficiency of the component.

Career Highlights

Throughout his career, Daisuke Nakamura has worked with esteemed companies such as Toyota Chuo Kenkyusho and Denso Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking projects in the semiconductor industry.

Collaborations

Daisuke has collaborated with talented individuals like Taishi Kimura and Hiroyuki Kondo. These partnerships have fostered a creative environment that has led to innovative solutions and advancements in technology.

Conclusion

Daisuke Nakamura's contributions to semiconductor technology and his impressive portfolio of patents highlight his role as a leading inventor in the field. His work continues to influence the industry and inspire future innovations.

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