The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Feb. 19, 2019
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute, JP;
Taishi Kimura, Nagakute, JP;
Daisuke Nakamura, Nagakute, JP;
Tetsuo Narita, Nagakute, JP;
Keita Kataoka, Nagakute, JP;
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute, JP;
Abstract
A semiconductor device includes: a substrate; and an n-type layer including a nitride semiconductor formed on the surface of the substrate. In the n-type layer, the concentration of donor impurities (excluding O) is 1×10cmor more and 1×10cmor less, the concentration of C impurities is 1×10cmor less, the concentration of O impurities is 1×10cmor less, the concentration of Ca impurities is 1×10cmor less, and the sum total of the concentrations of the C impurities, the O impurities, and the Ca impurities is lower than the concentration of the donor impurities. Such a semiconductor device can be fabricated by using a halogen-free vapor phase epitaxy (HF-VPE) device.