The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Feb. 08, 2018
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute, JP;
Taishi Kimura, Nagakute, JP;
Daisuke Nakamura, Nagakute, JP;
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute, JP;
Abstract
An apparatus for manufacturing compound single crystal includes a crystal growth section to hold a seed crystal, a gas supply section to supply a metal-contained gas and a reactant gas toward the seed crystal, and a heating section to heat the seed crystal and a metal source. The gas supply section includes a crucible holding the metal source, a carrier gas supply unit, and a reactant gas supply unit. A porous baffle plate is provided in an opening of the crucible. The porous baffle plate satisfies a relationship of 80%≤(1−V/V)×100<100% and a relationship of 0.0003<a/L<1.1. Vis an apparent volume of the porous baffle plate, Vis a total volume of the through-holes contained in the porous baffle plate, 'a' is a diameter of the through-hole, and L is a length of the through-hole.