The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Oct. 10, 2002
Daisuke Nakamura, Nagoya, JP;
Tadashi Ito, Nishikamo-gun, JP;
Hiroyuki Kondo, Kariya, JP;
Masami Naito, Inazawa, JP;
Daisuke Nakamura, Nagoya, JP;
Tadashi Ito, Nishikamo-gun, JP;
Hiroyuki Kondo, Kariya, JP;
Masami Naito, Inazawa, JP;
Denso Corporation, Kariya, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi-pref, JP;
Abstract
A refined SiC single crystal that includes a small number of defects is provided as follows. At a first growth step, a first seed crystal is formed from a crude SiC single crystal, and a first grown crystal is formed on a first growth surface, which is a plane having an inclination of 20 degrees or smaller from a {1-100} plane or an inclination of 20 degrees or smaller from a {11-20} plane. At an intermediate growth step, an n growth crystal is formed on an n growth surface, which is a plane having an inclination of 45 to 90 degrees from an (n−1) growth surface and an inclination of 60 to 90 degrees from a {0001} plane. At a final growth step, a final SiC single crystal is formed on a final growth surface, which has an inclination of 20 degrees or smaller from a {0001} plane.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile