Kabushiki Kaisha Toyota Chuo Kenkyusho

Denso Corporation

Toyota Jidosha Kabushiki Kaisha

Toyoda Iron Works Co., Ltd.

Daisuke Nakamura

Taishi Kimura

Hiroyuki Kondo

Naohiro Sugiyama

Fusao Hirose

Masami Naito

Itaru Gunjishima

Atsuto Okamoto

Takashi Hayashihara

Tetsuo Narita

Keita Kataoka

Akihiko Fukase

Keisuke Shigetoh

Yukikazu Ueno

Naoyasu Sugimoto

Akitoshi Suzumura

Emi Oguri

Tadashi Ito

Nobuyuki Kikukawa

A semiconductor device includes: a substrate; and an n-type layer including a nitride semiconductor formed on the surface of the substrate. In the n-type layer, the concentration of donor impurities (excluding O) is 1&#xd7;10cmor more and 1&#xd7;10cmor less, the concentration of C impurities is 1&#xd7;10cmor less, the concentration of O impurities is 1&#xd7;10cmor less, the concentration of Ca impurities is 1&#xd7;10cmor less, and the sum total of the concentrations of the C impurities, the O impurities, and the Ca impurities is lower than the concentration of the donor impurities. Such a semiconductor device can be fabricated by using a halogen-free vapor phase epitaxy (HF-VPE) device.

Semiconductor device and method for manufacturing the same

A heat-resistant member includes a base member composed of an isotropic graphite and a film with a single layer or multiple layers formed on the entire or partial surface of the base member. The film includes a dense WC layer with a single layer or multiple layers, and the dense WC layer includes WC as a main component and has a porosity of less than 3%. The film may further include a porous WC layer with a single layer or multiple layers formed on an entire or partial surface of the dense WC layer. In this case, the porous WC layer preferably includes WC as a main component and has a porosity larger than that of the dense WC layer.

Heat-resistant member

An apparatus for manufacturing compound single crystal includes a crystal growth section to hold a seed crystal, a gas supply section to supply a metal-contained gas and a reactant gas toward the seed crystal, and a heating section to heat the seed crystal and a metal source. The gas supply section includes a crucible holding the metal source, a carrier gas supply unit, and a reactant gas supply unit. A porous baffle plate is provided in an opening of the crucible. The porous baffle plate satisfies a relationship of 80%&#x2264;(1&#x2212;V/V)&#xd7;100&#x3c;100% and a relationship of 0.0003&#x3c;a/L&#x3c;1.1. Vis an apparent volume of the porous baffle plate, Vis a total volume of the through-holes contained in the porous baffle plate, 'a' is a diameter of the through-hole, and L is a length of the through-hole.

Apparatus provided with a crucible including a porous baffle plate therein for manufacturing compound single crystal and method for manufacturing compound single crystal

In a gallium nitride crystal, a nanovoid density in the crystal is less than 1&#xd7;10[cm]. A crystal growth apparatus is an apparatus for manufacturing a gallium nitride crystal, wherein a member having a B concentration of less than 1 ppm at least at a surface part is used as a member used at a part where a temperature is 500&#xb0; C. or higher (high-temperature member) among members exposed to a crystal growth space. When such a crystal growth apparatus is used, a gallium nitride crystal wherein a nanovoid density in the crystal is less than 1&#xd7;10[cm] is obtained.

Gallium nitride crystal, its manufacturing method, and crystal growth apparatus

A high heat-resistant member includes a graphite substrate including isotropic graphite and a carbide coating film including a carbide, such as tantalum carbide, and covering a surface of the graphite substrate, the carbide coating film having a randomly oriented isotropic grain structure in which crystallites having a size indexed by a full width at half maximum of a diffraction peak of an X-ray diffraction pattern of not more than 0.2&#xb0; from (111) planes are accumulated at substantially random. The orientation of the carbide coating film is determined by whether degree of orientation (F) in any Miller plane calculated based on an XRD pattern using the Lotgering method is within a range from &#x2212;0.2 to 0.2.

High heat-resistant member, method for producing the same, graphite crucible and method for producing single crystal ingot

A method for producing a high temperature-resistant article comprises an assembling step of foaming an assembly of a first substrate and a second substrate with an adhesive layer interposed therebetween and comprising paste of powder of at least one carbide of niobium carbide, hafnium carbide, tantalum carbide and tungsten carbide; and a bonding step of heating the assembly to bond the first substrate and the second substrate by sintering, thereby obtaining a high temperature-resistant article comprising the assembly after sintering. Moreover, a method for producing a high temperature-resistant article comprises a coating step of coating a slurry comprising powder of at least one carbide of niobium carbide, hafnium carbide, tantalum carbide and tungsten carbide on a surface of a high temperature-resistant substrate; a drying step of drying the substrate after the coating step; and a film-forming step of heating the substrate after the drying step to form a carbide coating film on the surface of the substrate by sintering, thereby obtaining a high temperature-resistant article having the carbide coating film. A high temperature-resistant article of a complicated shape can be easily produced at low costs by these methods.

High temperature-resistant article, method for producing the same, and high temperature-resistant adhesive

A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a seed crystal with a screw dislocation generation region; and growing the single crystal on a growth surface of the seed crystal. The generation region occupies equal to or smaller than 50% of the growth surface, which has an offset angle equal to or smaller than 60 degrees. The screw dislocation density in the single crystal generated from the generation region is higher than that in the other region. The single crystal includes a flat C-surface facet disposed on a growing surface of the single crystal. The C-surface facet overlaps at least one of parts of the growing surface provided by projecting the generation region in a direction perpendicular to the growth surface and in a direction parallel to a &#x3c;&#x3e; axis, respectively.

Method for manufacturing silicon carbide single crystal from dislocation control seed crystal

A vehicle pedal device including: a depressable portion which is to be operationally depressed by a driver of the vehicle; an output member which is pivotably supported by a supporting shaft provided in a bracket that is fixed to a body of the vehicle, such that the output member is pivoted about the supporting shaft when the depressable portion is operationally depressed, for thereby applying to a motive-power transmitting member an output corresponding to a depression force which is applied to the depressable portion; a longitudinal adjustment device which moves the depressable portion in a longitudinal direction of the body of the vehicle when the depressable portion is not being operationally depressed; and a pedal-ratio varying mechanism which is disposed between the output member and the motive-power transmitting member, and which is capable of adjusting a pedal ratio of the pedal device.

Vehicle pedal device capable of adjusting pedal position in longitudinal direction of vehicle

A refined SiC single crystal that includes a small number of defects is provided as follows. At a first growth step, a first seed crystal is formed from a crude SiC single crystal, and a first grown crystal is formed on a first growth surface, which is a plane having an inclination of 20 degrees or smaller from a {1-100} plane or an inclination of 20 degrees or smaller from a {11-20} plane. At an intermediate growth step, an n growth crystal is formed on an n growth surface, which is a plane having an inclination of 45 to 90 degrees from an (n&#x2212;1) growth surface and an inclination of 60 to 90 degrees from a {0001} plane. At a final growth step, a final SiC single crystal is formed on a final growth surface, which has an inclination of 20 degrees or smaller from a {0001} plane.

SiC single crystal, method for manufacturing SiC single crystal, SiC wafer having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device

It is the purpose of the present invention to prevent a macroscopic defect in the production of an SiC single crystal. SiC source material powder and an SiC seed crystal are disposed inside a graphite crucible, and the SiC source material powder is thermally sublimated and recrystallized on a front surface of the SiC seed crystal to grow an SiC single crystal. In this sublimation-recrystallization method, a protection layer is provided on a back surface of the SiC seed crystal. The SiC seed crystal is mechanically supported by a supporting part disposed on the graphite crucible without bonding. Thereby, it is possible to improve the thermal maldistribution on the back surface of the SiC seed crystal and possible to suppress damage of the protection layer due to the thermal maldistribution. Thus, macroscopic defects in the grown SiC single crystal are preferably suppressed.

Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal

A suspension arm in which the accuracy of a bush supporting portion is improved. The suspension arm is formed by respectively welding both side portions of an upper plate member and both side portions of a lower plate member to each other, the upper plate member and the lower plate member each having a substantially U-shaped cross-sectional configuration. The bush supporting portion is formed in such a manner that an upper cylindrical portion and a lower cylindrical portion are respectively formed by burring at rear ends of the upper plate member and the lower plate member. Further, clearances are respectively formed between the side portions of the upper plate member and the upper cylindrical portion, and between the side portions of the lower plate member and the lower cylindrical portion. Accordingly, there is no possibility that the heat generated upon welding is directly transmitted to the upper cylindrical member and the lower cylindrical member, so that the accuracy of the bush supporting portion can be improved.

Growing community of inventors

Nagoya, Japan

Daisuke Nakamura