The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Dec. 21, 2001
Hiroyuki Kondo, Kariya, JP;
Emi Oguri, Nishikamo-gun, JP;
Fusao Hirose, Tsukuba, JP;
Daisuke Nakamura, Aichi-gun, JP;
Atsuto Okamoto, Aichi-gun, JP;
Naohiro Sugiyama, Aichi-gun, JP;
Denso Corporation, Kariya, JP;
Abstract
It is the purpose of the present invention to prevent a macroscopic defect in the production of an SiC single crystal. SiC source material powder and an SiC seed crystal are disposed inside a graphite crucible, and the SiC source material powder is thermally sublimated and recrystallized on a front surface of the SiC seed crystal to grow an SiC single crystal. In this sublimation-recrystallization method, a protection layer is provided on a back surface of the SiC seed crystal. The SiC seed crystal is mechanically supported by a supporting part disposed on the graphite crucible without bonding. Thereby, it is possible to improve the thermal maldistribution on the back surface of the SiC seed crystal and possible to suppress damage of the protection layer due to the thermal maldistribution. Thus, macroscopic defects in the grown SiC single crystal are preferably suppressed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile