The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Sep. 01, 2016
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute-shi, Aichi-ken, JP;
Taishi Kimura, Nagakute, JP;
Daisuke Nakamura, Nagakute, JP;
KABUSHIKI KAISHA TOYOTA JIDOSHA CHUO KENKYUSHO, Nagakute-shi, JP;
Abstract
In a gallium nitride crystal, a nanovoid density in the crystal is less than 1×10[cm]. A crystal growth apparatus is an apparatus for manufacturing a gallium nitride crystal, wherein a member having a B concentration of less than 1 ppm at least at a surface part is used as a member used at a part where a temperature is 500° C. or higher (high-temperature member) among members exposed to a crystal growth space. When such a crystal growth apparatus is used, a gallium nitride crystal wherein a nanovoid density in the crystal is less than 1×10[cm] is obtained.