The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Aug. 05, 2004
Itaru Gunjishima, Nagoya, JP;
Daisuke Nakamura, Nagoya, JP;
Naohiro Sugiyama, Nagoya, JP;
Fusao Hirose, Obu, JP;
Itaru Gunjishima, Nagoya, JP;
Daisuke Nakamura, Nagoya, JP;
Naohiro Sugiyama, Nagoya, JP;
Fusao Hirose, Obu, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi-pref., JP;
Denso Corporation, Kariya, JP;
Abstract
A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a seed crystal with a screw dislocation generation region; and growing the single crystal on a growth surface of the seed crystal. The generation region occupies equal to or smaller than 50% of the growth surface, which has an offset angle equal to or smaller than 60 degrees. The screw dislocation density in the single crystal generated from the generation region is higher than that in the other region. The single crystal includes a flat C-surface facet disposed on a growing surface of the single crystal. The C-surface facet overlaps at least one of parts of the growing surface provided by projecting the generation region in a direction perpendicular to the growth surface and in a direction parallel to a <> axis, respectively.