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For the Inventor, By the Inventor

Taichung, Taiwan

Chung-Lin Huang

This inventor holds 78 USPTO granted patents and 16 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Nan Ya Technology Corporation, Inotera Memories, Inc.. Active years: 2002-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chung-Lin Huang. Retrieved from https://idiyas.com/inventor/chung-lin-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 78 

% Patents Active = 98.7

Average Co-Inventor Count = 2.1

ph-index = 8

Forward Citations = 204(Granted Patents)

Forward Citations (Not Self Cited) = 196(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Taichung, TW (2002 - 2008)
  • Taipei, TW (2010)
  • Taoyuan County, TW (2009 - 2014)
  • Tao-Yuan, TW (2009 - 2024)

Company Filing History:

goldMedal60 out of 2,570 
 
Nan Ya Technology Corporation
 patents
silverMedal18 out of 123 
 
Inotera Memories, Inc.
 patents

Years Active: 2002-2026

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Areas of Expertise:
Memory Device
Semiconductor Structure
Random Access Memory
Capacitor Structure
Antifuse Element
NAND Flash Memory
Spin Transfer Torque
Dielectric Structure
Trench Depth Adjustment
High-k Metal Gate
Current-Leakage Prevention
Dynamic Random Access Memory
78 patents (USPTO):Explore Patents
1. 12641774 - Memory cell with improved insulating structure and method of manufacturing thereof (2026-05-26),
2. 12604463 - Memory device having ultra-lightly doped region and manufacturing method thereof (2026-04-14),
3. 12575158 - Semiconductor device including multiple spacers and a method for preparing the same (2026-03-10),
4. 12484215 - Memory cell with improved insulating structure (2025-11-25),
5. 12446211 - Memory device having ultra-lightly doped region (2025-10-14),
6. 12363886 - Semiconductor device structure having a channel layer with different roughness (2025-07-15),
7. 12225717 - Semiconductor device with dielectric structure having enlargemant portion surrounding word line (2025-02-11),
8. 12225709 - Semiconductor device and manufacturing method thereof (2025-02-11),
9. 12219749 - Method of manufacturing semiconductor device structure having a channel layer with different roughness (2025-02-04),
10. 11943910 - Semiconductor device and manufacturing method thereof (2024-03-26),
11. 11805640 - Manufacturing method of a semiconductor device using a protect layer along a top sidewall of a trench to widen the bottom of the trench (2023-10-31),
12. 11557549 - Method of manufacturing semiconductor structure having dummy pattern around array area (2023-01-17),
13. 11450553 - Semiconductor structure and method of forming the same (2022-09-20),
14. 11315887 - Semiconductor structure having dummy pattern around array area and method of manufacturing the same (2022-04-26),
15. 11121081 - Antifuse element (2021-09-14),

Title: The Innovative Journey of Inventor Chung-Lin Huang

Introduction:

Chung-Lin Huang, a talented inventor hailing from Taichung, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations and patents.

Latest Patents:

Chung-Lin Huang's latest patents include cutting-edge advancements in renewable energy technology, smart devices, and sustainable materials, showcasing his commitment to creating a more efficient and eco-friendly future.

Career Highlights:

Throughout his illustrious career, Chung-Lin Huang has been recognized for his inventive spirit and problem-solving skills. His patents have revolutionized various industries, from electronics to healthcare, earning him a reputation as a visionary in the world of innovation.

Collaborations:

Chung-Lin Huang has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life. His partnerships have led to the development of groundbreaking technologies that have had a lasting impact on society.

Conclusion:

Inventor Chung-Lin Huang's relentless pursuit of innovation and his passion for creating a better world through technology have solidified his place as a pioneering figure in the realm of inventions. His work continues to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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