The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Aug. 13, 2020
Nanya Technology Corporation, New Taipei, TW;
Ying-Cheng Chuang, Taoyuan, TW;
Chung-Lin Huang, Taoyuan, TW;
Lai-Cheng Tien, New Taipei, TW;
Chih-Lin Huang, Taipei, TW;
Zhi-Yi Huang, Taichung, TW;
Hsu Chiang, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A method of forming a semiconductor structure includes following steps. A semiconductor material structure is formed over a substrate. A first pad layer is formed over the semiconductor material structure. The first pad layer and the semiconductor material structure are etched to form a trench. An oxidation process is performed on a sidewall of the semiconductor material structure to form a first oxide structure on the sidewall of the semiconductor material structure. A second oxide structure is formed in the trench.