The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Jan. 31, 2023
Applicant:
Nanya Technology Corporation, New Taipei City, TW;
Inventor:
Chung-Lin Huang, Taoyuan City, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H01L 23/528 (2006.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10D 64/021 (2025.01); H10D 30/0227 (2025.01); H10D 30/601 (2025.01); H10W 20/435 (2026.01);
Abstract
A semiconductor device and a method for preparing the same are provided. The semiconductor device includes a substrate, a gate electrode, a first spacer, and a second spacer. The gate electrode is disposed on the substrate. The first spacer is disposed on a sidewall of the gate electrode. The second spacer covers the first spacer. The first spacer includes dopants.