The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Mar. 04, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Szu-Yao Chang, New Taipei, TW;

Chung-Lin Huang, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H10B 12/05 (2023.02); H01L 29/66666 (2013.01); H10B 12/30 (2023.02); H10B 12/488 (2023.02);
Abstract

A semiconductor device structure and method for manufacturing the same are provided. The method includes: providing a substrate; forming a first word line and a second word line extending along a first direction; forming a dielectric material conformally on a first sidewall of the first word line and on a second sidewall of the second word line, wherein the second sidewall of the second word line faces the first sidewall of the first word line; forming a semiconductor material on a sidewall of the dielectric material; and patterning the dielectric material and the semiconductor material to form a gate dielectric structure and a channel layer between the first word line and the second word line.


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