The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Jun. 16, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Ying-Cheng Chuang, Taoyuan, TW;

Chung-Lin Huang, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01);
Abstract

The present disclosure provides a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a substrate defined with a peripheral region and an array area at least partially surrounded by the peripheral region, wherein the substrate includes a plurality of fins protruding from the substrate and disposed in the array area, and a first elongated member protruding from the substrate and at least partially surrounding the plurality of fins; an insulating layer disposed over the plurality of fins and the first elongated member; a capping layer disposed over the insulating layer; and an isolation surrounding the plurality of fins, the first elongated member, the insulating layer and the capping layer.


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