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For the Inventor, By the Inventor

Seoul, South Korea

Chul-soon Kwon

USPTO Granted Patents = 17 

Average Co-Inventor Count = 4.2

ph-index = 4

Forward Citations = 96(Granted Patents)


Company Filing History:

goldMedal17 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1999-2011

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17 patents (USPTO):Explore Patents
1. 7956343 - Nonvolatile memory devices and method of manufacturing the same (2011-06-07),
2. 7564092 - Flash memory device having a split gate (2009-07-21),
3. 7560765 - Nonvolatile memory device and method of fabricating the same (2009-07-14),
4. 7553726 - Method of fabricating nonvolatile memory device (2009-06-30),
5. 7375391 - Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device (2008-05-20),
6. 7205194 - Method of fabricating a flash memory cell (2007-04-17),
7. 7195933 - Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern (2007-03-27),
8. 7115470 - Methods of fabricating flash memory cell having split-gate structure using spacer oxidation process (2006-10-03),
9. 7094646 - Flash memory device having a split gate and method of manufacturing the same (2006-08-22),
10. 7081380 - Method of forming a conductive pattern of a semiconductor device and method of manufacturing a non-volatile semiconductor memory device using the same (2006-07-25),
11. 6977200 - Method of manufacturing split-gate memory (2005-12-20),
12. 6974748 - Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device (2005-12-13),
13. 6924505 - Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern (2005-08-02),
14. 6853028 - Non-volatile memory device having dummy pattern (2005-02-08),
15. 6800525 - Method of manufacturing split gate flash memory device (2004-10-05),

Title: Innovations of Chul-soon Kwon in Nonvolatile Memory Devices

Introduction

Chul-soon Kwon is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory devices, holding a total of 17 patents. His work primarily focuses on nonvolatile memory technologies, which are crucial for modern electronic devices.

Latest Patents

Among his latest patents, Kwon has developed innovative solutions such as nonvolatile memory devices and methods for manufacturing them. One of his notable inventions involves a nonvolatile memory device utilizing resistive elements. This device includes a semiconductor substrate, multiple variable resistance patterns, and heat sink patterns that are aligned with the variable resistance patterns and connected to a ground voltage. Another significant patent is for a flash memory device featuring a split gate design. This design prevents misalignment between the active region and the floating gate electrode. The manufacturing method includes stacking a gate oxide layer and a floating gate conductive layer on a semiconductor substrate, forming an isolation layer, and defining an active region.

Career Highlights

Chul-soon Kwon is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of nonvolatile memory devices, making them more efficient and reliable.

Collaborations

Kwon has collaborated with notable colleagues such as Jae-Hyun Park and Jin-Woo Kim. Their combined expertise has contributed to the successful development of innovative memory solutions.

Conclusion

Chul-soon Kwon's contributions to the field of nonvolatile memory devices highlight his role as a leading inventor in the technology sector. His patents reflect a commitment to innovation and excellence in memory technology.

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