The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2006
Filed:
Feb. 23, 2004
Don-woo Lee, Suwon-si, KR;
Chul-soon Kwon, Seoul, KR;
Chang-yup Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of forming a conductive pattern of a semiconductor device includes forming a conductive layer is on a substrate, forming a polishing protection layer on the substrate including over the conductive layer, and forming a step compensation layer on the polishing protection layer to reduce the step presented by the layer that is the polishing protection layer. The conductive layer is the exposed by removing select portions of the step compensation layer and the polishing protection layer. The conductive pattern is ultimately formed on the substrate by etching the exposed conductive layer. By planarization the intermediate structure several times once the step compensation layer is formed, a highly uniform conductive layer is sure to be formed.