The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2005
Filed:
Nov. 08, 2004
Yong-hee Kim, Gyeonggi-do, KR;
Chul-soon Kwon, Seoul, KR;
Jin-woo Kim, Gyeonggi-do, KR;
Joo-chan Kim, Seoul, KR;
Dae-geun Kim, Gyeonggi-do, KR;
Eui-youl Ryu, Gyeonggi-do, KR;
Yong-hee Kim, Gyeonggi-do, KR;
Chul-soon Kwon, Seoul, KR;
Jin-woo Kim, Gyeonggi-do, KR;
Joo-chan Kim, Seoul, KR;
Dae-geun Kim, Gyeonggi-do, KR;
Eui-youl Ryu, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of manufacturing split-gate memory provides a control gate insulating film and the tunneling insulating film in a cell region, a high voltage gate insulating film in a high voltage region, and a low voltage gate insulating film in a low voltage region, all having different thickness. Additionally, a pre-cleaning process removes an outer sidewall portion of a spacer to form a tip portion of a floating gate that overlaps a control gate line formed proximate the floating gate.