The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Jan. 18, 2007
Jung-ho Moon, Seoul, KR;
Chul-soon Kwon, Seoul, KR;
Jae-min Yu, Anyang-si, KR;
Jae-hyun Park, Yongin-si, KR;
Young-cheon Jeong, Yongin-si, KR;
In-gu Yoon, Uiwang-si, KR;
Jung-ho Moon, Seoul, KR;
Chul-soon Kwon, Seoul, KR;
Jae-min Yu, Anyang-si, KR;
Jae-hyun Park, Yongin-si, KR;
Young-cheon Jeong, Yongin-si, KR;
In-gu Yoon, Uiwang-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, unknown;
Abstract
A nonvolatile memory device includes a semiconductor substrate; a source region that is formed in the semiconductor substrate; a gate insulating film that is formed so as to partially overlap the source region on the semiconductor substrate; a floating gate that is formed on the gate insulating film so as to have a structure forming a uniform electric field in the portion that overlaps the source region; a control gate that is formed so as to be electrically isolated along one sidewall of the floating gate from an upper part of the floating gate, an inter-gate insulating film that is interposed between the floating gate and the control gate, and a drain region that is formed so as to be adjacent the other side of the control gate.