The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
May. 07, 2004
Jae-hyun Park, Yongin-si, KR;
Jae-min Yu, Seoul, KR;
Chul-soon Kwon, Seoul, KR;
In-gu Yoon, Suwon-si, KR;
Eung-yung Ahn, Suwon-si, KR;
Jung-ho Moon, Yongin-si, KR;
Yong-sun Lee, Seoul, KR;
Sung-yung Jeon, Yongin-si, KR;
Jae-Hyun Park, Yongin-si, KR;
Jae-Min Yu, Seoul, KR;
Chul-Soon Kwon, Seoul, KR;
In-gu Yoon, Suwon-si, KR;
Eung-yung Ahn, Suwon-si, KR;
Jung-ho Moon, Yongin-si, KR;
Yong-Sun Lee, Seoul, KR;
Sung-Yung Jeon, Yongin-si, KR;
Abstract
There is provided a method of fabricating a split-gate flash memory cell using a spacer oxidation process. An oxidation barrier layer is formed on a floating gate layer, and an opening to expose a portion of the floating gate layer is formed in the oxidation barrier layer. Subsequently, a spacer is formed on a sidewall of the opening with a material layer having insulation property by oxidizing, and an inter-gate oxide layer pattern between a floating gate and a control gate is formed in the opening while the spacer is oxidized by performing an oxidation process.