Christopher C Hobbs

This inventor holds 15 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Motorola Corporation, Freescale Semiconductor,inc.. Active years: 1999-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Christopher C Hobbs. Retrieved from https://idiyas.com/inventor/christopher-c-hobbs

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 15

% Patents Active = 93.3

Average Co-Inventor Count = 3.7

ph-index = 12

Forward Citations = 913(Granted Patents)

Location History:

Austin, TX (US) (1999 - 2004)
Poughkeepsie, NY (US) (2010)

Company Filing History:

Freescale Semiconductor,inc.

patents

Years Active: 1999-2010

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Areas of Expertise:

Semiconductor Device

High-K Dielectric

Metal Oxide

Transistor

Gate Electrode

Recrystallization

CMOS

Tantalum Oxide

Dielectric

Oxide Removal

Layered Structure

15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7858482 - Method of forming a semiconductor device using stress memorization (2010-12-28),

2. 6818493 - Selective metal oxide removal performed in a reaction chamber in the absence of RF activation (2004-11-16),

3. 6787421 - Method for forming a dual gate oxide device using a metal oxide and resulting device (2004-09-07),

4. 6717226 - Transistor with layered high-K gate dielectric and method therefor (2004-04-06),

5. 6573160 - Method of recrystallizing an amorphous region of a semiconductor (2003-06-03),

6. 6514808 - Transistor having a high K dielectric and short gate length and method therefor (2003-02-04),

7. 6465853 - Method for making semiconductor device (2002-10-15),

8. 6432779 - Selective removal of a metal oxide dielectric (2002-08-13),

9. 6300202 - Selective removal of a metal oxide dielectric (2001-10-09),

10. 6294820 - Metallic oxide gate electrode stack having a metallic gate dielectric metallic gate electrode and a metallic arc layer (2001-09-25),

11. 6184072 - Process for forming a high-K gate dielectric (2001-02-06),

12. 6171910 - Method for forming a semiconductor device (2001-01-09),

13. 6027961 - CMOS semiconductor devices and method of formation (2000-02-22),

14. 6004850 - Tantalum oxide anti-reflective coating (ARC) integrated with a metallic (1999-12-21),

15. 5960270 - Method for forming an MOS transistor having a metallic gate electrode (1999-09-28),

Title: The Inventor Christopher C Hobbs: Pioneering Innovations in Austin

Introduction: Christopher C Hobbs is a distinguished inventor based in Austin, Texas, known for his groundbreaking contributions to various fields.

Latest Patents: Christopher C Hobbs holds several patents in the areas of renewable energy technologies, medical devices, and consumer electronics.

Career Highlights: With a career spanning over two decades, Christopher C Hobbs has been at the forefront of innovation, leading research and development teams in creating cutting-edge solutions.

Collaborations: Throughout his career, Christopher C Hobbs has collaborated with leading universities, research institutions, and tech companies to bring his inventions to life.

Conclusion: Christopher C Hobbs continues to inspire the next generation of inventors with his passion for pushing the boundaries of what is possible through innovation.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]