The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Nov. 30, 2001
Srikanth B. Samavedam, Austin, TX (US);
Christopher C. Hobbs, Austin, TX (US);
William J. Taylor, Jr., Round Rock, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A transistor device ( ) utilizes a high K dielectric ( ) between a gate electrode ( ) and a substrate ( ). The high K dielectric ( ) is etched under the gate electrode ( ) so that there is an area between the gate electrode ( ) and the substrate ( ) that is void of high K dielectric ( ). The source/drains extensions ( and ) are minimized to extend substantially in alignment with the edge of gate dielectric ( ) to reduce overlap with the gate dielectric ( ). This results in reduced capacitance between the gate and the source/drain extensions. The void areas ( and ) between the gate and the substrate ( ) may remain void or may be filled with a low K dielectric, or at least a dielectric that is not high K.