The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Mar. 31, 2008
Da Zhang, Hopewell Junction, NY (US);
Christopher C. Hobbs, Poughkeepsie, NY (US);
Srikanth B. Samavedam, Fishkill, NY (US);
Da Zhang, Hopewell Junction, NY (US);
Christopher C. Hobbs, Poughkeepsie, NY (US);
Srikanth B. Samavedam, Fishkill, NY (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A stress memorization technique (SMT) film is deposited over a semiconductor device. The SMT film is annealed with a low thermal budget anneal that is sufficient to create and transfer the stress of the SMT film to the semiconductor device. The SMT film is then removed. After the SMT film is removed, a second anneal is applied to the semiconductor device sufficiently long and at a sufficiently high temperature to activate dopants implanted for forming device source/drains. The result of this approach is that there is minimal gate dielectric growth in the channel along the border of the channel.