The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2001

Filed:

Jul. 21, 1999
Applicant:
Inventors:

Christopher C. Hobbs, Austin, TX (US);

Bikas Maiti, Austin, TX (US);

Wei Wu, Austin, TX (US);

Assignee:

Motorola Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract

First and second dummy structures (,and,) are formed over a semiconductor device substrate (,). In one embodiment, portions of the first dummy structure (,) are removed and replaced with a first conductive material (,) to form a first gate electrode (,) and portions of second dummy structure (,) are removed and replaced with a second conductive material (,) to form a second gate electrode (,). In an alternate embodiment, the dummy structures (,and,) are formed using a first conductive material (,) that is used to form the first electrode (,). The second electrode is then formed by removing the first conductive material (,) from dummy structures (,) and replacing it with a second conductive material (,). In accordance with embodiments of the present invention, the first conductive material and the second conductive material are different conductive materials.


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