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For the Inventor, By the Inventor

Taipei, Taiwan

Chi-Hsing Hsu

This inventor holds 25 USPTO granted patents and 11 published patent applications and 2 EPO patents, primarily in Negative Capacitance Transistors. Top assignees: Azurewave Technologies, Inc., Taiwan Semiconductor Manufacturing Comp. Ltd., Other. Active years: 2011-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chi-Hsing Hsu. Retrieved from https://idiyas.com/inventor/chi-hsing-hsu-47aiinit

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 72.0


Average Co-Inventor Count = 2.2

ph-index = 3

Forward Citations = 43(Granted Patents)


Location History:

  • Taipei, TW (2011 - 2013)
  • New Taipei, TW (2013 - 2024)

Company Filing History:

goldMedal12 out of 55 
 
Azurewave Technologies, Inc.
 patents
silverMedal11 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
bronzeMedal2 out of 834,453 
Other
 patents

Years Active: 2011-2025

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Areas of Expertise:
Negative Capacitance Transistor
MOSFET
Ferroelectric Structure
Image Sensing Module
Diffusion Blocking Layer
Channel Structures
High Performance
Light Emitting Structure
Portable Electronic Device
Sensor Package
EMI Function
Optical Component
25 patents (USPTO):Explore Patents
1. 12272751 - Negative capacitance transistor with a diffusion blocking layer (2025-04-08),
2. 11961897 - Negative capacitance transistor with external ferroelectric structure (2024-04-16),
3. 11855090 - High performance MOSFETs having varying channel structures (2023-12-26),
4. 11784235 - Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile (2023-10-10),
5. 11581436 - Negative capacitance transistor with a diffusion blocking layer (2023-02-14),
6. 11532622 - High performance MOSFETs having different device characteristics (2022-12-20),
7. 11349008 - Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile (2022-05-31),
8. 11222958 - Negative capacitance transistor with external ferroelectric structure (2022-01-11),
9. 11031395 - Method of forming high performance MOSFETs having varying channel structures (2021-06-08),
10. 10879238 - Negative capacitance finFET and method of fabricating thereof (2020-12-29),
11. 10861973 - Negative capacitance transistor with a diffusion blocking layer (2020-12-08),
12. 9860431 - Portable electronic device and image capturing module thereof (2018-01-02),
13. 9786709 - Portable electronic device and image capturing module thereof (2017-10-10),
14. 9349903 - Image sensing module and method of manufacturing the same (2016-05-24),
15. 9287306 - Production apparatus for manufacturing sensor package structure (2016-03-15),

Title: The Innovative Journey of Chi-Hsing Hsu

Introduction: Chi-Hsing Hsu, a pioneering inventor hailing from New Taipei, Taiwan, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Chi-Hsing Hsu holds several patents in the field of electronics and semiconductor technology, with his most recent patent focusing on advanced nanotechnology applications in consumer electronics.

Career Highlights: With a career spanning over two decades, Chi-Hsing Hsu has worked tirelessly to push the boundaries of technological advancement. His work has led to the development of cutting-edge products that have revolutionized the industry.

Collaborations: Throughout his career, Chi-Hsing Hsu has collaborated with leading research institutions and technology companies to further his innovative projects. His ability to work in multidisciplinary teams has been instrumental in the success of his inventions.

Conclusion: Chi-Hsing Hsu's relentless pursuit of innovation and his passion for pushing the limits of technology have solidified his position as a trailblazing inventor in the field. His work continues to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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