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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11784235 B1

PDFFull Text
Date of Patent:
Oct. 10, 2023

Filed:

May. 27, 2022

Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chi-Hsing Hsu, New Taipei, TW;

Sai-Hooi Yeong, Zhubei, TW;

Chih-Yu Chang, New Taipei, TW;

Ching-Wei Tsai, Hsinchu, TW;

Kuan-Lun Cheng, Hsin-Chu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

HAYNES AND BOONE, LLP

Primary Examiner:

Victoria K Hall

Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02194 (2013.01); H01L 21/28194 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/78 (2013.01); H01L 29/78391 (2014.09); H01L 29/4232 (2013.01); H01L 29/66545 (2013.01);
Abstract

A negative capacitance semiconductor device includes a substrate. A dielectric layer is disposed over a portion of the substrate. A ferroelectric structure is disposed over the dielectric layer. Within the ferroelectric structure: a material composition of the ferroelectric structure varies as a function of a height within the ferroelectric structure. A gate electrode is disposed over the ferroelectric structure.

Find Patent Forward Citations

Hsu, Chi-Hsing. (2023). Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile (U.S. Patent No. 11784235). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11784235

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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