The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Sep. 16, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Chi-Hsing Hsu, New Taipei, TW;
Sai-Hooi Yeong, Zhubei, TW;
Chih-Yu Chang, New Taipei, TW;
Ching-Wei Tsai, Hsinchu, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02194 (2013.01); H01L 21/28194 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/78 (2013.01); H01L 29/78391 (2014.09); H01L 29/4232 (2013.01); H01L 29/66545 (2013.01);
Abstract
A negative capacitance semiconductor device includes a substrate. A dielectric layer is disposed over a portion of the substrate. A ferroelectric structure is disposed over the dielectric layer. Within the ferroelectric structure: a material composition of the ferroelectric structure varies as a function of a height within the ferroelectric structure. A gate electrode is disposed over the ferroelectric structure.