Cheng-Jun Wu

This inventor holds 10 USPTO granted patents and 4 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng-Jun Wu. Retrieved from https://idiyas.com/inventor/cheng-jun-wu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 (Patent Applications = 4)

% Patents Active = 80.0

Average Co-Inventor Count = 5.4

ph-index = 1

Forward Citations = 7(Granted Patents)

Company Filing History:

10 out of 42,926

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2020-2026

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10 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12707901 - Bottom electrode structure in memory device (2026-08-11),

2. 12628381 - Wakeup-free ferroelectric memory device (2026-05-12),

3. 12389814 - High electron affinity dielectric layer to improve cycling (2025-08-12),

4. 11696521 - High electron affinity dielectric layer to improve cycling (2023-07-04),

5. 11631810 - Bottom electrode structure in memory device (2023-04-18),

6. 11594632 - Wakeup-free ferroelectric memory device (2023-02-28),

7. 11107528 - Multi-step reset technique to enlarge memory window (2021-08-31),

8. 10985316 - Bottom electrode structure in memory device (2021-04-20),

9. 10879391 - Wakeup-free ferroelectric memory device (2020-12-29),

10. 10861547 - Multi-step reset technique to enlarge memory window (2020-12-08),

I specialize in innovations, inventions, inventors, patent attorneys, assignees and patents.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

4 patents pending: