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For the Inventor, By the Inventor

Hsinchu, Taiwan

Cheng-Jun Wu

This inventor holds 10 USPTO granted patents and 3 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2020-2026.

USPTO Granted Patents = 10 

% Patents Active = 80.0

Average Co-Inventor Count = 5.4

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:

goldMedal10 out of 42,711 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2020-2026

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10 patents (USPTO):Explore Patents
1. 12707901 - Bottom electrode structure in memory device (2026-08-11),
2. 12628381 - Wakeup-free ferroelectric memory device (2026-05-12),
3. 12389814 - High electron affinity dielectric layer to improve cycling (2025-08-12),
4. 11696521 - High electron affinity dielectric layer to improve cycling (2023-07-04),
5. 11631810 - Bottom electrode structure in memory device (2023-04-18),
6. 11594632 - Wakeup-free ferroelectric memory device (2023-02-28),
7. 11107528 - Multi-step reset technique to enlarge memory window (2021-08-31),
8. 10985316 - Bottom electrode structure in memory device (2021-04-20),
9. 10879391 - Wakeup-free ferroelectric memory device (2020-12-29),
10. 10861547 - Multi-step reset technique to enlarge memory window (2020-12-08),

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