The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2023
Filed:
Dec. 10, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Mickey Hsieh, Hsin-Chu, TW;
Chun-Yang Tsai, Hsinchu, TW;
Kuo-Ching Huang, Hsinchu, TW;
Kuo-Chi Tu, Hsin-Chu, TW;
Pili Huang, Hsin-Chu, TW;
Cheng-Jun Wu, Hsin-Chu, TW;
Chao-Yang Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards a ferroelectric memory device. The ferroelectric memory device includes a pair of source/drain regions disposed in a semiconductor substrate. A gate dielectric is disposed over the semiconductor substrate and between the source/drain regions. A first conductive structure is disposed on the gate dielectric. A ferroelectric structure is disposed on the first conductive structure. A second conductive structure is disposed on the ferroelectric structure, where both the first conductive structure and the second conductive structure have an overall electronegativity that is greater than or equal to an overall electronegativity of the ferroelectric structure.