Company Filing History:
Years Active: 2020-2023
Title: Innovations of Pili Huang in Memory Device Technology
Introduction
Pili Huang is a distinguished inventor based in Hsin-Chu, Taiwan, with a notable portfolio of four patents related to advancements in memory device technology. Her innovative contributions have significantly impacted the field, promoting enhanced performance and efficiency in electronic devices.
Latest Patents
Huang's most recent patents include the "Bottom Electrode Structure in Memory Device" and the "Wakeup-Free Ferroelectric Memory Device." The first patent outlines an integrated chip design featuring a unique bottom electrode structure that improves data storage capabilities. It describes a configuration where lower interconnects are strategically arranged within a dielectric structure, with a reactivity reducing layer ensuring optimal functionality between the bottom electrode and the substrate.
The second patent presents a ferroelectric memory device that incorporates a pair of source/drain regions within a semiconductor substrate. This design includes a comprehensive gate dielectric and conductive structures that optimize the performance of the ferroelectric material, enhancing data retention and accessibility.
Career Highlights
Pili Huang has established herself as a leading inventor at Taiwan Semiconductor Manufacturing Company Limited, where her expertise in memory devices continues to shape the industry. Her focus on integrating advanced materials and innovative architectures has placed her at the forefront of semiconductor technology.
Collaborations
Throughout her career, Huang has collaborated with esteemed colleagues, including Chao-Yang Chen and Chun-Yang Tsai. These partnerships have enabled her to combine expertise and drive further innovations in the memory device sector, demonstrating the power of teamwork in achieving groundbreaking results.
Conclusion
Pili Huang's innovative spirit and dedication to advancing memory device technology underline her significance as an inventor. Her contributions, through her patents and collaborations, continue to influence the development of next-generation electronic devices, making her a key figure in the field of semiconductor technology.