The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2023
Filed:
Apr. 19, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chao-Yang Chen, Hsin-Chu, TW;
Chun-Yang Tsai, Hsinchu, TW;
Kuo-Ching Huang, Hsinchu, TW;
Wen-Ting Chu, Kaohsiung, TW;
Pili Huang, Hsin-Chu, TW;
Cheng-Jun Wu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes one or more lower interconnects arranged within a dielectric structure over a substrate. A bottom electrode is disposed over one of the one or more lower interconnects. The bottom electrode includes a first material having a first electronegativity. A data storage layer separates the bottom electrode from a top electrode. The bottom electrode is between the data storage layer and the substrate. A reactivity reducing layer includes a second material and has a second electronegativity that is greater than or equal to the first electronegativity. The second material contacts a lower surface of the bottom electrode that faces the substrate.