The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Oct. 28, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chao-Yang Chen, Hsinchu, TW;
Cheng-Jun Wu, Hsin-Chu, TW;
Chun-Yang Tsai, Hsinchu, TW;
Kuo-Ching Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present disclosure relates to a method, comprising the performing of a reset operation to a resistive random access memory (RRAM) cell. A first voltage bias having a first polarity is applied to the RRAM cell. An absolute value of the first voltage bias is greater than an absolute value of a first reset voltage. The application of the first voltage bias induces the RRAM cell to change from a low resistance to an intermediate resistance greater than the low resistance. A second voltage bias having a second polarity oppose to the first polarity is then applied to the RRAM cell. An absolute value of the second reset voltage is less than an absolute value of the second voltage bias and less than the absolute value of the first reset voltage. The application of the second voltage bias induces the RRAM cell to have a high resistance.