The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
May. 21, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chao-Yang Chen, Hsinchu, TW;
Cheng-Jun Wu, Hsin-Chu, TW;
Chun-Yang Tsai, Hsinchu, TW;
Kuo-Ching Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present disclosure relates to a method of operation a resistive random access memory (RRAM) cell, comprising the performing of a reset operation to the RRAM cell. A first voltage bias is applied to the RRAM cell. The first voltage bias has a first polarity. The application of the first voltage bias induces the RRAM cell to change from a low resistance to an intermediate resistance. The intermediate resistance is greater than the low resistance. A second voltage bias is then applied to the RRAM cell. The second voltage bias has a second polarity that is opposite to the first polarity. The application of the second voltage bias induces the RRAM cell to have a high resistance. The high resistance is greater than the intermediate resistance.