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For the Inventor, By the Inventor

Hefei, China

Cheng-Jer Yang

USPTO Granted Patents = 13 

 

Average Co-Inventor Count = 1.1

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal13 out of 1,682 
 
Changxin Memory Technologies, Inc.
 patents

Years Active: 2022-2026

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13 patents (USPTO):Explore Patents
1. 12519014 - Semiconductor structure including an electrode cover layer over a capacitor of a dynamic random access memory (DRAM) formed in a substrate, and a contact structure electrically connected to the electrode cover layer, and method of making the same (2026-01-06),
2. 12341132 - Semiconductor structure (2025-06-24),
3. 12293979 - Memory structure including elastic material based buffer column structure near contact structure to improve stability of connection (2025-05-06),
4. 12033691 - Readout circuit layout structure, readout circuit, and memory layout structure (2024-07-09),
5. 11929132 - Testing method, testing system, and testing apparatus for semiconductor chip (2024-03-12),
6. 11892502 - Through-silicon via (TSV) fault-tolerant circuit, method for TSV fault-tolerance and integrated circuit (IC) (2024-02-06),
7. 11886733 - Circuit for testing a memory and test method thereof (2024-01-30),
8. 11869576 - Word line driving circuit and dynamic random access memory (2024-01-09),
9. 11862269 - Testing method for packaged chip, testing system for packaged chip, computer device and storage medium (2024-01-02),
10. 11830553 - Word line drive circuit and dynamic random access memory (2023-11-28),
11. 11715543 - Memory test circuit apparatus and test method (2023-08-01),
12. 11614481 - Through-silicon via detecting circuit, detecting methods and integrated circuit thereof (2023-03-28),
13. 11340294 - Boundary test circuit, memory and boundary test method (2022-05-24),

Title: Cheng-Jer Yang: Innovator in Semiconductor and Memory Structures

Introduction

Cheng-Jer Yang is a prominent inventor based in Hefei, China, known for his significant contributions to the fields of semiconductor and memory technologies. With a total of 12 patents to his name, Yang has made remarkable advancements that enhance the performance and stability of electronic devices.

Latest Patents

Among his latest innovations, Yang has developed a semiconductor structure that features a stacked configuration of semiconductor dies. This structure includes a first base, a channel, and multiple auxiliary through electrodes, which are designed to create isolated transmission paths for improved electrical connections. Additionally, he has patented a memory structure that incorporates an elastic material-based buffer column. This design aims to enhance the stability of connections within capacitive structures, ensuring reliable performance in memory applications.

Career Highlights

Cheng-Jer Yang is currently employed at Changxin Memory Technologies, Inc., where he continues to push the boundaries of technology in memory and semiconductor design. His work has been instrumental in advancing the capabilities of modern electronic devices, making them more efficient and reliable.

Collaborations

Yang has collaborated with notable colleagues, including You-Hsien Lin and Yi-Jun Lu, contributing to a dynamic research environment that fosters innovation and creativity.

Conclusion

Cheng-Jer Yang's contributions to semiconductor and memory technologies exemplify the spirit of innovation. His patents reflect a commitment to enhancing electronic device performance, making him a key figure in the field.

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