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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12519014 B1

PDFFull Text
Date of Patent:
Jan. 06, 2026

Filed:

Apr. 22, 2022

Semiconductor structure including an electrode cover layer over a capacitor of a dynamic random access memory (dram) formed in a substrate, and a contact structure electrically connected to the electrode cover layer, and method of making the same

Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Cheng-Jer Yang, Hefei, CN;

Assignee:

CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;

Attorney:

Kilpatrick Townsend & Stockton LLP

Primary Examiner:

Sue A Purvis

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/7687 (2013.01); H01L 21/76805 (2013.01); H01L 21/76844 (2013.01); H01L 21/76846 (2013.01); H01L 21/76895 (2013.01); H01L 23/53266 (2013.01); H01L 23/535 (2013.01); H10B 12/30 (2023.02);
Abstract

A semiconductor structure includes: an electrode cover layer; a first conductive structure on the electrode cover layer; a contact structure, including a first and a first contact layer. The first contact layer is in contact with the first conductive structure, the bottom of the second contact layer is in contact with the top of the first contact layer, the width of the first contact layer is greater than the width of the bottom of the second contact layer, the lower surface of the contact structure is not lower than the lower surface of the electrode cover layer, and the resistivity of the first conductive structure is not greater than that of the contact structure and is not greater than that of the electrode cover layer.

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