Changxin Memory Technologies, Inc.

Cheng-Jer Yang

You-Hsien Lin

Yi-Jun Lu

A semiconductor structure includes: an electrode cover layer; a first conductive structure on the electrode cover layer; a contact structure, including a first and a first contact layer. The first contact layer is in contact with the first conductive structure, the bottom of the second contact layer is in contact with the top of the first contact layer, the width of the first contact layer is greater than the width of the bottom of the second contact layer, the lower surface of the contact structure is not lower than the lower surface of the electrode cover layer, and the resistivity of the first conductive structure is not greater than that of the contact structure and is not greater than that of the electrode cover layer.

Semiconductor structure including an electrode cover layer over a capacitor of a dynamic random access memory (DRAM) formed in a substrate, and a contact structure electrically connected to the electrode cover layer, and method of making the same

The present disclosure provides a semiconductor structure, including a stacked structure, wherein the stacked structure includes a plurality of stacked semiconductor dies, and each of the semiconductor dies includes: a first base; a channel provided on the first base; and at least one first auxiliary through electrode and a plurality of connection through electrodes running through the first base, wherein the at least one first auxiliary through electrode is surrounded by the plurality of connection through electrodes, wherein connection through electrodes of adjacent ones of the semiconductor dies are connected through a first electrical connection structure to form a plurality of mutually isolated transmission paths, and each of the transmission paths is connected to at least one channel through at least one connection through electrode thereon.

Semiconductor structure

Embodiments provide a memory structure, including: a capacitive structure, provided with an upper electrode layer; a conductive column, arranged on the upper electrode layer, and in contact with and electrically connected to the upper electrode layer; a metal layer, arranged on a side of the conductive column away from the upper electrode layer, the conductive column being in contact with a surface of the metal layer facing the upper electrode layer; and at least one buffer column, spaced apart from the conductive column, in contact with the surface of the metal layer facing the upper electrode layer, and extending in a direction from the metal layer to the upper electrode layer.

Memory structure including elastic material based buffer column structure near contact structure to improve stability of connection

Embodiments of the present application provide a readout circuit layout structure, a readout circuit, and a memory layout structure. The readout circuit layout structure includes: a readout amplification module, a first processing module, and a second processing module arranged along a preset direction, wherein the readout amplification module is configured to read a voltage of a bit line, and the first processing module and the second processing module are at least configured to perform a noise cancellation on an output signal of the readout amplification module. The readout amplification module includes: a first NMOS region and a first PMOS region arranged close to the first processing module, and a second NMOS region and a second PMOS region arranged close to the second processing module, the first NMOS region, the first PMOS region, the second PMOS region, and the second NMOS region being arranged along the preset direction.

Readout circuit layout structure, readout circuit, and memory layout structure

The present invention relates to a testing method, a testing system, and a testing apparatus for a semiconductor chip. The method includes: acquiring a target chip; obtaining an abnormal chip after a test of read and write functions is performed separately on a preset number of memory cells in an edge region of the target chip; recording location information of individual memory cells with abnormal read and write functions on the abnormal chip; judging whether an abnormality of read and write functions of the abnormal chip is a block abnormality based on the location information; wherein the abnormal chip refers to the target chip including the memory cell with abnormal read and write functions.

Testing method, testing system, and testing apparatus for semiconductor chip

An integrated circuit with a through-silicon via (TSV) fault-tolerant circuit, a TSV fault tolerance method are disclosed. The IC may include a plurality of operational TSVs, a spare TSV, a plurality of fault-tolerance control modules each coupled to one of the plurality of operational TSVs and the spare TSV, and a decoder coupled to the fault-tolerance control modules. The fault-tolerance control modules may be configured to deactivate an operational TSV that is determined to be defective and activate the spare TSV based on a positioning code for the defective operational TSV from the decoder. The IC may reduce the defect rate in the fabrication of TSV-based three-dimensional (3D) IC chips.

Through-silicon via (TSV) fault-tolerant circuit, method for TSV fault-tolerance and integrated circuit (IC)

A circuit for testing a memory and a test method thereof are provided. According to the circuit for testing a memory provided by the present disclosure, a switch control circuit is connected between a discharge end and a negative bias signal end of a Sub Wordline Drive (SWD) and configured to input a trigger signal, so that potential of a Word Line (WL) signal end in a to-be-tested circuit meets a preset potential suspension range. Then, it is determined whether there is leakage behavior between the WL signal end and a Bit Line (BL) signal end in the to-be-tested circuit by detecting whether the present level state of a stored signal in the to-be-tested circuit is consistent with an initial level state. The to-be-tested circuit is a corresponding circuit in a single memory.

Circuit for testing a memory and test method thereof

A word line driving circuit includes a driving circuit and a control circuit. The control circuit includes a control sub-circuit, a first switching sub-circuit and a second switching sub-circuit. The first switching sub-circuit is provided with: a control terminal electrically connected with the control sub-circuit, a first terminal electrically connected with a first power supply voltage, and a second terminal electrically connected with a third input terminal of the driving circuit. The second switching sub-circuit is provided with: a control terminal electrically connected with the control sub-circuit, a first terminal electrically connected with a second power supply voltage, and a second terminal electrically connected with the third input terminal of the driving circuit. The second power supply voltage is greater than a ground voltage.

Word line driving circuit and dynamic random access memory

A testing method for a packaged chip includes: acquiring a target chip; in the post-burn-in test process, testing a first data retention time of each memory unit on the target chip; comparing the first data retention time of each memory unit with a preset reference time; and, determining that the target chip is a qualified chip if the first data retention time of each memory unit is not less than the preset reference time. In the present application, by testing the first data retention time of each memory unit on the target chip in the post-burn-in test process, it is determined that the target chip is a qualified chip if the first data retention time of each memory unit is not less than the preset reference time.

Testing method for packaged chip, testing system for packaged chip, computer device and storage medium

The application provides a Word Line (WL) drive circuit and a Dynamic Random Access Memory (DRAM). The WL drive circuit includes a first transistor, a second transistor, a third transistor and a fourth transistor. A gate of the first transistor is connected to a WL switch-off voltage, a drain is connected to the WL; a gate of the second transistor is connected to a first drive voltage of the WL, a drain is connected to the WL; and a source of the first transistor and a source of the second transistor are both connected to a negative bias through the third transistor.

Word line drive circuit and dynamic random access memory

A memory test circuit apparatus and a method are provided. The method may include: compressing first test data output by a first storage array in a memory to generate first compressed data, compressing second test data output by a second storage array in the memory to generate second compressed data, compressing the first compressed data and the second compressed data to generate third compressed data, and outputting one of the first compressed data, the second compressed data and the third compressed data to determine a working condition of each of the first storage array and the second storage array. This method can provide not only a test result on a memory, but also a test result for individual storage array within the memory, which improves the efficiency of a circuit test.

Memory test circuit apparatus and test method

A TSV detecting circuit, TSV detecting methods, and an integrated circuit thereof are disclosed by the present disclosure. The TSV detecting circuit includes a first detecting module includes: a first comparison unit; a first input unit, for transmitting an input signal to a first input of the first comparison unit controlled by a first clock signal; a first switching unit for transmitting a signal of a first node to a second input of the first comparison unit controlled by a first detection control signal, the first node coupled to a first terminal of the TSV; and a second detecting module includes: a second input unit for transmitting the input signal to a second node controlled by a second clock signal; a second switching unit for transmitting a signal of the second node to a second terminal of the TSV controlled a second detection control signal.

Through-silicon via detecting circuit, detecting methods and integrated circuit thereof

Boundary test circuit, memory and boundary test method are provided. The boundary test circuit may include a plurality of serially-connected wrapper boundary registers (WBRs) and a plurality of toggle circuits (TCs). Each WBR may include a first I/O for receiving an initial test signal and a second I/O for transmitting the initial test signal to the WBR at a succeeding stage. Each TC may include an input for receiving the initial test signal stored in a corresponding WBR, a control I/O for receiving a toggle signal, and an output for transmitting a real-time test signal to the integrated circuit. The toggle signal may be configured to control phase switching of the real-time test signal, and, depending on the toggle signal, the real-time test signal may have a phase identical or inverse to a phase of the initial test signal. This method improves the efficiency and flexibility of the boundary test.

Growing community of inventors

Hefei, China

Cheng-Jer Yang