The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Jun. 20, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Cheng-Jer Yang, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06537 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06589 (2013.01);
Abstract

The present disclosure provides a semiconductor structure, including a stacked structure, wherein the stacked structure includes a plurality of stacked semiconductor dies, and each of the semiconductor dies includes: a first base; a channel provided on the first base; and at least one first auxiliary through electrode and a plurality of connection through electrodes running through the first base, wherein the at least one first auxiliary through electrode is surrounded by the plurality of connection through electrodes, wherein connection through electrodes of adjacent ones of the semiconductor dies are connected through a first electrical connection structure to form a plurality of mutually isolated transmission paths, and each of the transmission paths is connected to at least one channel through at least one connection through electrode thereon.


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