The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Aug. 26, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventor:
Cheng-Jer Yang, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Anhui, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); H03K 3/015 (2006.01); G11C 16/30 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0433 (2013.01); G11C 16/30 (2013.01); H03K 3/015 (2013.01);
Abstract
The application provides a Word Line (WL) drive circuit and a Dynamic Random Access Memory (DRAM). The WL drive circuit includes a first transistor, a second transistor, a third transistor and a fourth transistor. A gate of the first transistor is connected to a WL switch-off voltage, a drain is connected to the WL; a gate of the second transistor is connected to a first drive voltage of the WL, a drain is connected to the WL; and a source of the first transistor and a source of the second transistor are both connected to a negative bias through the third transistor.