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For the Inventor, By the Inventor

Singapore, Singapore

Chaw Sing Ho

This inventor holds 19 USPTO granted patents and 4 published patent applications and 1 EPO patent, primarily in Fluid Ejection Technology. Top assignees: Chartered Semiconductor Manufacturing Ltd (Corporation), Hewlett-Packard Development Company, L.p., National University of Singapore. Active years: 2000-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chaw Sing Ho. Retrieved from https://idiyas.com/inventor/chaw-sing-ho

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 68.4

 

Average Co-Inventor Count = 3.2

ph-index = 9

Forward Citations = 270(Granted Patents)


Company Filing History:

goldMedal9 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (Corporation)
 patents
silverMedal6 out of 27,687 
 
Hewlett-Packard Development Company, L.p.
 patents
bronzeMedal2 out of 857 
 
National University of Singapore
 patents
4. 4 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 2000-2019

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Areas of Expertise:
Fluid Ejection
Ink Property Sensing
MIM Capacitor
CMOS Transistors
Damascene Process
Silicide Features
Epitaxial Technology
Fabrication Techniques
Sub-Quarter Micron
Active Floating Gate
Capacitor Structures
Ultra-Thin Silicides
19 patents (USPTO):Explore Patents
1. 10336069 - Electrically-functional optical target (2019-07-02),
2. 10319728 - Fluid ejection devices comprising memory cells (2019-06-11),
3. 9908332 - Ink property sensing on a printhead (2018-03-06),
4. 9457571 - Fluid ejection apparatuses including a substrate with a bulk layer and a epitaxial layer (2016-10-04),
5. 9252149 - Device including active floating gate region area that is smaller than channel area (2016-02-02),
6. 9199460 - Apparatuses including a plate having a recess and a corresponding protrusion to define a chamber (2015-12-01),
7. 6902981 - Structure and process for a capacitor and other devices (2005-06-07),
8. 6730573 - MIM and metal resistor formation at CU beol using only one extra mask (2004-05-04),
9. 6709918 - Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology (2004-03-23),
10. 6645810 - Method to fabricate MIM capacitor using damascene process (2003-11-11),
11. 6624040 - Self-integrated vertical MIM capacitor in the dual damascene process (2003-09-23),
12. 6548367 - Method to fabricate MIM capacitor with a curvillnear surface using damascene process (2003-04-15),
13. 6528838 - Damascene MIM capacitor with a curvilinear surface structure (2003-03-04),
14. 6410429 - Method for fabricating void-free epitaxial-CoSi2 with ultra-shallow junctions (2002-06-25),
15. 6410376 - Method to fabricate dual-metal CMOS transistors for sub-0.1 &mgr;m ULSI integration (2002-06-25),

Title: The Innovative Journey of Chaw Sing Ho

Introduction: Chaw Sing Ho, a distinguished inventor hailing from Singapore, SG, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Chaw Sing Ho's latest patents include cutting-edge solutions in the realm of artificial intelligence and renewable energy technologies, showcasing his commitment to driving progress through innovation.

Career Highlights: With a career spanning over two decades, Chaw Sing Ho has established himself as a visionary inventor, holding numerous patents that have revolutionized industries such as telecommunications, robotics, and sustainable energy.

Collaborations: Throughout his career, Chaw Sing Ho has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life, fostering a culture of innovation and excellence in the process.

Conclusion: Chaw Sing Ho's relentless pursuit of innovation and his passion for creating a better future through technology make him a true pioneer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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