The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Dec. 14, 2016
Applicant:

Hewlett-packard Development Company, L.p., Houston, TX (US);

Inventors:

Chaw Sing Ho, Singapore, SG;

Reynaldo V. Villavelez, Corvallis, OR (US);

Xin Ping Cao, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11524 (2017.01); H01L 27/11521 (2017.01); H01L 29/788 (2006.01); H01L 29/423 (2006.01); B41J 2/14 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); B41J 2/1433 (2013.01); H01L 21/28273 (2013.01); H01L 27/11524 (2013.01); H01L 29/42324 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/788 (2013.01); H01L 29/7881 (2013.01);
Abstract

In some examples, a fluid ejection device includes a substrate and a memory cell on the substrate, the memory cell including a first dielectric layer, a floating gate, a second dielectric layer, and a control gate. The memory cell includes a channel region between a drain region and a source region. The first dielectric layer is over the channel region and the floating gate is capacitively coupled to the channel region through the first dielectric layer. The floating gate includes a polysilicon layer, a metal layer, and a second dielectric layer between the polysilicon layer and the metal layer, where the second dielectric layer includes an opening through which the polysilicon layer is electrically connected to the metal layer.


Find Patent Forward Citations

Loading…