The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Dec. 02, 2002
Chit Hwei Ng, Singapore, SG;
Jian Xun Li, Singapore, SG;
Kok Wai Chew, Singapore, SG;
Tjin Tjin Tjoa, Singapore, SG;
Chaw Sing Ho, Singapore, SG;
Shao Fu Sanford Chu, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A method for making concurrently metal-insulator-metal (MIM) capacitors and a metal resistors in a Cu damascene back-end-of-line process is achieved. The method forms a Cu capacitor bottom metal plate using a dual-damascene process. A Si N or SiC is deposited to form a capacitor dielectric layer on the Cu bottom plate. A metal layer having an upper etch-stop layer is deposited and patterned to form concurrently capacitor top plates and metal resistors. The patterning is terminated in the capacitor dielectric layer to prevent Cu particle contamination. An insulating layer is deposited and via holes are etched to the capacitor top plates and the metal resistors using the upper etch-stop layer to prevent overetching and damage. The method provides a MIM capacitor using only one additional photoresist mask while improving process yield.